Innoscience

Our INN100W135A-Q and the ultra-compact INN100W800A-Q devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to 1/5 of those of silicon solutions. buff.ly/3ZiHyGJ

Our new 100-150V top-side cooled GaN power transistors reduce junction temperatures by 25%. With their excellent electrical properties and ultra-miniaturized packaging, our medium and low-voltage GaN parts have found adoption in a variety of applications buff.ly/4h4rjE6.

Let's start the year with our GaN portfolio, covering LV, MV, and HV GaN available in discrete and integrated (SolidGaN) solutions. We also offer our bi-directional VGaN, which replaces two Si MOSFETs in BMS applications, and our GaN gate drivers. buff.ly/3PlWYoW

This piece explores how GaN evolved into a complete solution for a wide range of applications. Once only considered suitable for specific applications, our GaN devices are found in everything from compact mobile chargers to LED drivers and power supplies. buff.ly/3PjI6r7

Our proprietary 8-inch GaN-on-Si epi-buffer technology is optimized for both high-voltage (HV) and low-voltage (LV) devices. By controlling our in-house epi-technology, we can quickly adapt the epi-process to meet specific needs or applications. buff.ly/3BkHC0m

Wishing all our partners, customers, and team members a joyful holiday season! 🎄 As we reflect on a year of growth and innovation, we're grateful for the continued trust in our GaN technology, which is revolutionizing power electronics!

Our INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm respectively, offer significant advantages in terms of size and power efficiency. Click here for more information: buff.ly/3ZiHyGJ

This 250W GaN Charger teardown shows how our 650V/80mΩ devices deliver high performance and compact design. Click here to learn more: buff.ly/41usND7

Let's revisit this article from Power Electronics World: 'GaN Blossoms into Full Technology Solutions,' which highlights the advances of GaN in various applications, from datacenters to LED drivers and more. Enjoy reading it! Read it here: buff.ly/3Zh2BJz

We’ve introduced four new GaN-on-Silicon enhancement mode HEMTs in our En-FCQFN top-side cooling package, offering significant improvements in thermal performance. Read the full article here: buff.ly/3D3gS59

Today’s the day! Dr. Denis Marcon will be presenting “Price competitive GaN power devices are the technology of choice for high-efficiency, compact and cost-effective power systems” at Bodo’s Wide Bandgap (WBG) Event at 10:15 AM.

Our new Battery Management System (BMS) is designed specifically for electric three-wheelers and e-bikes, powered by our 100 V GaN devices. The INV100FQ030A VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. buff.ly/49aymbH

On December 4th, Dr. Denis Marcon will present “Price competitive GaN power devices are the technology of choice for high-efficiency, compact and cost-effective power systems” at Bodo’s Wide Bandgap (WBG) Event. Click here for more information: bodoswbg.com/gan.aspx

We will be presenting at Bodo’s Wide Bandgap Event on December 4th. Dr. Denis Marcon, General Manager of Innoscience Europe, will discuss how GaN power devices outperform traditional silicon, with a Figure of Merit (Ron x Qg) that is ten times better. bodoswbg.com/gan.aspx

This white paper explores how Class-D audio amplifiers are achieving new performance standards with our Gallium Nitride (GaN) technology. Our GaN devices enhance efficiency, reduce size and weight, and deliver superior output quality in Class-D amplifiers. richardsonrfpd.com/ep-white-paper…

It’s happening today! Join Dr. Denis Marcon at 10:40 AM at the Power Electronics Forum during electronica for his presentation: "Enabling Smaller, More Efficient and Cheaper Power Converter Systems with Price-Competitive GaN Power Devices." See you there!

Our INN100W135A-Q and smaller package INN100W800A-Q are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. wnie.online/innoscience-ex…

Our new battery management system (BMS) solutions are designed to meet the growing demand for eco-friendly travel, mobile energy storage, and compact power applications. Click here to read the full article: compoundsemiconductor.net/article/120354…

Dr. Jan Šonský will give a tutorial at the ECPE (European Center for Power Electronics) in Manchester on October 19th and 20th: "Wide Bandgap User Training - GaN-based Power Electronics | ECPE Tutorial." More information can be found here: ecpe.org/events/worksho…

Innoscience expands 100V automotive-grade GaN device portfolio. @InnoscienceTech semiconductor-today.com/news_items/202…