YESvGaN

Sandra Fischer-MCL presented her work on vertical GaN devices at Therminic 2024! The talk focused on thermal effects in vGaN membrane Schottky diodes. A key finding is that for thin doped GaN layers, phenomena like carrier crowding significantly influence the heating behavior.

Congratulations to Manuel Fregolent for winning the Best Paper Award at ESREF 2024! In this paper, Manuel analyzes the breakdown mechanism and the stability of the threshold voltage, and found an interesting trapping mechanism happening in the epitaxial layers of the transistor.

YESvGaN is excited to showcase the latest publication by Youssef HAMDAOUI et al., titled: "Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices". You can access the paper here: mdpi.com/2072-666X/15/9…

The 3rd YESvGaN newsletter, providing a summary of the project and its progress of the third year is available for download on the YESvGaN website!!! Please use the following link and click on "DOWNLOAD": yesvgan.eu/en/news #GaN #galliumnitride #newsletter #YESvGaN

The GaN Marathon felt like a sprint... Time certainly flies when you are having fun! 😁 A great atmosphere can only come from great people! ❤️ YESvGaN would like to thank everyone that made the GaN Marathon a lasting memory. #GaN #galliumnitride #ganmarathon #YESvGaN

The GaN Marathon is a great success! Amazing presentations, a beautiful group of people and breathtaking scenery!😍 Special thanks to Christian Huber, Youssef Hamdaoui and Nicolò Zagni for representing YESvGaN! 👏 Thanks to all YESvGaN partners, you make all of this possible!

Looking for stability in GaN devices? Look no further than Manuel Fregolent’s poster at the GaN Marathon (June 11 17:00)! We study Vth instability in vertical GaN-on-Si TMOSFETs with a LPCVD SiO2 gate dielectric. Quality of the oxide and near interface traps play a crucial role!

Jesús Ortiga-Fibla explores GaN dislocations in power device structures! Do dislocations trap charge? Does it change over time? Possible to identify dislocation types based on their charge trapping? Learn how UV-assisted KPFM provides answers at the GaN Marathon (June 11 17:00)!

What happens after Mg implantation and activation in GaN layers? Come take a look at Ana Cros Stötter’s poster “Characterization of Mg implanted GaN layers by Raman scattering and light assisted KPFM” at the GaN Marathon and find out (11th of June at 17:00)! #GaN #UVEG

Thermal management has never been more important as Sandra Fischer heats up the GaN Marathon (June 11 17:00)! Studying the (electro)thermal characteristics of vertical GaN devices using simulations and experimental techniques yields insights for improving the thermal management.

Growing high-quality, thick GaN drift layers challenging? Not anymore for Sondre Michler! YESvGaN is thrilled to announce the poster “Epitaxy of thick GaN drift layers on Si (111) for vertical power devices” at the GaN Marathon, where Sondre explains how to do it (June 11 17:00).

At the GaN Marathon, R. Lerner presents the process chain for GaN-on-Si wafers with fully vertical devices (June 11 17:00). From the epitaxial process via the front side and backside cavity processing towards first electrical contact characterization! #GaN #XFAB #YESvGaN

Y. Hamdaoui on stage at the GaN Marathon (June 11 08:25)! Focus on vertical GaN-on-Si pn diodes with breakdown voltages > 1000 V, low on-state resistance and avalanche capability. Comparing pseudo with fully vertical diodes shows the strengths of the fully vertical architecture.

We are proud to have Nicolò Zagni at the GaN Marathon (June 11 at 09:00). The talk "Insights from Device Simulations into Trapping Effects in Vertical GaN Power Devices", treats how TCAD simulations help quantify the role of traps in vertical GaN-on-Si device characteristics.

Next week, the GaN Marathon will kick off! In his invited talk, Christian Huber discusses the latest insights about the feasibility of vertical GaN on foreign substrates. This will include first data about recent fully vertical GaN-on-silicon Trench MOSFETs (June 10 at 17:10).

Oops we did it … a GaN transistor! YESvGaN proudly announces that the first fully vertical GaN-on-Si TMOSFETs are finished. They demonstrate the feasibility of our vertical GaN membrane transistor concept for large active areas up to 16mm2. Learn more at the GaN Marathon.

After being a great hit, Dr. Eldad Bahat Treidel (FBH) his webinar is broadcasted again by @SilvacoSoftware. February 29 10:00 – 10:30 Santa Clara, 11:00 – 11:30 Paris, 11:00 – 11:30 Beijing. silvaco.com/webinar/gan-ba… #GaN #galliumnitride #simulation

Have a look to our new YESvGaN publication! pubs.aip.org/aip/jap/articl…

One of the goals of YESvGaN is to demonstrate the feasibility of fully vertical GaN-on-Silicon Trench MOSFETs. The first processed device wafers have now left the Bosch research cleanroom. Look at these beauties! They feature up to 16mm2transistors on a 150mm wafer. Stay tuned!

The webinar of Eldad Bahat Treidel at SURGE was such a big hit that @SilvacoSoftware will broadcast it again on the 29th of February: 10:00 – 10:30 Santa Clara; 11:00 – 11:30 Paris; 11:00 – 11:30 Beijing. Register now! silvaco.com/webinar/gan-ba… #GaN #galliumnitride #simulation