Paul
210 posts


if we suspect 30T tokens this is 2.3e25 flops in pretraining, not to mention how many flops would have been spent in RL inference




Mistral Medium 3.5 is out and it's a dense 128B model



DeepSeek's tactics are amusing "OK, you don't think reliable 1M context, fast, for pennies, at top-tier open source intelligence, is cool enough? Have a 75% price cut. Not entertained? Have a ≈free cache. Still meh? How about vision?" I wonder if they're out of rabbits











🇨🇳BIG CHINESE TECH FIRMS RUSH TO SECURE ORDERS FOR HUAWEI CHIPS AFTER DEEPSEEK PREVIEW - SOURCES SCRAMBLE FOLLOWS RELEASE OF DEEPSEEK V4 MODEL USING HUAWEI CHIPS #CHINA #TECH #AI #DEEPSEEK #HUAWEI (mktnews.com/flashDetail.ht…)

很多人知道中微做刻蚀设备,但不太清楚CCP、ICP、LPCVD、ALD分别是什么。简单聊一下。 刻蚀是把材料去掉,薄膜沉积是把材料加上去。芯片制造就是在这两个动作之间反复循环,制程越先进,循环次数越多,精度要求越高。 CCP,电容耦合等离子体刻蚀,两块平行电极板之间产生等离子体,离子能量高,专门刻介质材料。3D NAND里那些又深又窄的沟槽主要靠CCP,中微Q1报出的90:1超高深宽比就是CCP的活。ICP,电感耦合等离子体刻蚀,用线圈产生等离子体,能量相对柔,适合刻金属和硅,逻辑芯片的栅极、接触孔这些精细活归ICP管。140:1的3D DRAM深宽比就是ICP的成绩。 LPCVD,低压化学气相沉积,在晶圆表面镀一层均匀的薄膜。ALD,原子层沉积,一层原子一层原子地往上镀,精度到埃级别,GAA架构那种纳米级多层堆叠只有ALD能做到。 中微从CCP起家,现在同时推ICP、LPCVD、ALD,本质上是往平台化方向走。






